850nm 10mW VCSEL Diode
850nm 10mW VCSEL Diode,850nm single longitudinal mode;Oxide isolation technology;Small emission area;Easy to collimate;Modulation and width >2GHz.

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1. Features:
850nm single longitudinal mode;
Oxide isolation technology;
Small emission area;
Easy to collimate;
Modulation and width >2GHz.
2. Applications:
Proximity sensors;
Consumer electronics;
Active optical cables;
Medical applications;
Range finder sensors.

 3.Electro-Optical Characteristics(25 laser temperature)

Parameters

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Optical output power

Po

IF = 11mA

-

10

-

mW

Threshold current

ITH

-

-

1.1

-

mA

Slope efficiency

η

-

-

1.01

-

W/A

Power conversion efficiency

PCE

-

-

38

-

%

Center wavelength

λP

PO = 10mW

840

850

860

nm

Laser forward voltage

VF

IF = 11mA

-

2.5

2.7

V

Series resistance

RS

IF = 11mA

-

60

-

Ω

Emission area

-

-

-

Φ12

-

um

Beam

divergence

( 1/e^2)

θ

IF = 11mA

 

20

-

 

Deg.

FWHM

-

-

16

 

Wavelength shift

 
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